SCOPUS 정보 검색 플랫폼

Journal of Superconductivity and Novel Magnetism

Volumn 26, Issue 1, 2013, Pages 187-195

Exciting dilute magnetic semiconductor: Copper-doped ZnO

(8) Karamat, S a,b Rawat, R S a Tan, T L a Lee, P a Springham, S V a Anis Ur Rehman, b Chen, R c Sun, H D c

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b COMSATS Institute of Information Technology ^* (Pakistan)

c NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

Dilute magnetic semiconductor; Thin films

Indexed keywords

AMBIENT PRESSURES; CU-DOPED; CU-DOPED ZNO; CU-DOPING; DILUTE MAGNETIC SEMICONDUCTORS; EMISSION PEAKS; FERROMAGNETIC SIGNALS; IN-VACUUM; LOW TEMPERATURES; MAGNETIC BEHAVIOR; OXIDATION STATE; OXYGEN AMBIENT PRESSURE; PL MEASUREMENTS; SAPPHIRE SUBSTRATES; SOLID-STATE REACTION TECHNIQUES; TARGET MATERIALS; VALENCE STATE; VALENCE-BAND MAXIMUMS; ZNO;

BINDING ENERGY; OXYGEN; PELLETIZING; PULSED LASER DEPOSITION; SAPPHIRE; SEMICONDUCTING ANTIMONY; SEMICONDUCTOR DOPING; SOLID STATE REACTIONS; THIN FILMS; ZINC OXIDE;

COPPER;

EID: 84871983848 PISSN: 15571939 EISSN: 15571947 Source Type: Journal
DOI: 10.1007/s10948-012-1710-2 Document Type: Article

Times cited : (32)

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