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Volumn 5, Issue 2, 2013, Pages 537-540
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Edge-tailored graphene oxide nanosheet-based field effect transistors for fast and reversible electronic detection of sulfur dioxide
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Author keywords
[No Author keywords available]
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Indexed keywords
FIELD EFFECT TRANSISTORS;
INORGANIC ACIDS;
NANOSHEETS;
SULFUR;
ELECTRONIC DETECTION;
GRAPHENE OXIDES;
PERIODIC ACID;
RECOVERING PROCESS;
ROOM TEMPERATURE;
SENSING MECHANISM;
SENSING PERFORMANCE;
STRUCTURAL CHANGE;
SULFUR DIOXIDE;
GRAPHITE;
NANOMATERIAL;
OXIDE;
SILICON DIOXIDE;
ARTICLE;
ATOMIC FORCE MICROSCOPY;
CHEMICAL MODEL;
CHEMISTRY;
DOSE RESPONSE;
ELECTRODE;
ELECTRONICS;
HUMAN;
INFRARED SPECTROSCOPY;
KINETICS;
MATERIALS TESTING;
METHODOLOGY;
PH;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR;
TEMPERATURE;
DOSE-RESPONSE RELATIONSHIP, DRUG;
ELECTRODES;
ELECTRONICS;
GRAPHITE;
HUMANS;
HYDROGEN-ION CONCENTRATION;
KINETICS;
MATERIALS TESTING;
MICROSCOPY, ATOMIC FORCE;
MICROSCOPY, ELECTRON, SCANNING;
MODELS, CHEMICAL;
NANOSTRUCTURES;
OXIDES;
SILICON DIOXIDE;
SPECTROSCOPY, FOURIER TRANSFORM INFRARED;
TEMPERATURE;
TRANSISTORS, ELECTRONIC;
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EID: 84871806980
PISSN: 20403364
EISSN: 20403372
Source Type: Journal
DOI: 10.1039/c2nr32752j Document Type: Article |
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Times cited : (63)
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References (27)
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