Inducing extended line defects in graphene by linear adsorption of C and N atoms

Applied Physics Letters

Volumn 101, Issue 25, 2012, Pages

  Li, Yu ^a,b,c   Zhang, Rui Qin ^b   Lin, Zijing ^a   Van Hove, Michel A ^d  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

^c Suzhou Institute for Advanced Study   (China)

^d HONG KONG BAPTIST UNIVERSITY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ADSORPTION DENSITIES; ADSORPTION MODEL; CARBON RINGS; LINE DEFECTS; LINEAR ADSORPTION; MOLECULAR DYNAMICS SIMULATIONS; STABLE CONFIGURATION;

ATOMS; DEFECTS; DENSITY FUNCTIONAL THEORY; GRAPHENE; O RINGS;

ADSORPTION;

EID: 84871788603     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4772212     Document Type: Article

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