170 GHz Photodiodes for InP-based photonic integrated circuits

2012 IEEE Photonics Conference, IPC 2012

Volumn , Issue , 2012, Pages 88-89

  Rouvalis, Efthymios ^a   Cthioui, Mourad ^b   Van Dijk, Fredderic ^b   Fice, Martyn J ^a   Carpintero, Guillermo ^c   Renaud, Cyril C ^a   Seeds, Alwyn J ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b ALCATEL THALES III V LAB   (France)

^c UNIVERSIDAD CARLOS III DE MADRID   (Spain)

Author keywords

Microwave Photonics; Millimeter waves; Photonic Integrated Circuits (PICs); Uni Traveling Carrier Photodiode (UTC PD); Wireless Transmission

Indexed keywords

MICROWAVE PHOTONICS; MONOLITHIC INTEGRATION; PHOTONIC INTEGRATED CIRCUITS; ULTRA-FAST; UNI-TRAVELING CARRIER PHOTODIODE; WIRELESS TRANSMISSIONS;

BANDWIDTH; DIODES; MONOLITHIC INTEGRATED CIRCUITS; PHOTODIODES; PHOTONIC DEVICES; PHOTONIC INTEGRATION TECHNOLOGY; SEMICONDUCTOR QUANTUM WELLS;

PHOTONICS;

EID: 84871745157     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IPCon.2012.6358502     Document Type: Conference Paper

References (6)

1. H.-J. Song, and T. Nagatsuma, "Present and Future of Terahertz Communications," IEEE Transactions on Terahertz Science and Technology, vol. 1, no. 1, pp. 256-263, 2011.
2. M. J. Fice, E. Rouvalis, L. Ponnampalam, C. C. Renaud, and A. J. Seeds, "Telecommunications technology-based terahertz sources," Electronics Letters, vol. 46, no. 26, pp. S28-S31, 2010.
3. E. Rouvalis, C. C. Renaud, D. G. Moodie, M. J. Robertson, and A. J. Seeds, "Travelling-Wave Uni-Travelling Carrier Photodiodes for continuous wave THz generation," Optics Express, vol. 18, no. 11, pp. 11105-11110, 2010.
4. E. Rouvalis, C. C. Renaud, D. G. Moodie, M. J. Robertson, and A. J. Seeds, "Continuous Wave Terahertz Generation from Ultra-Fast InPBased Photodiodes," IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 3, pp. 509-517, 2012.
5. J.-W. Shi, F.-M. Kuo, M. Rodwell, and J. E. Bowers, "Ultra-High Speed (270 GHz) Near-Ballistic Uni-Traveling-Carrier Photodiode with Very-High Saturation Current (17 mA) under a 50 Ω Load," in IEEE Photonics Conference (IPC) 2011, pp. 21-22, 2011.
6. E. Rouvalis, M. Chtioui, M. Tran, F. Lelarge, F. van Dijk, M. J. Fice, C. C. Renaud, G. Carpintero, and A. J. Seeds, "High-speed photodiodes for InP-based photonic integrated circuits," Optics Express, vol. 20, no. 8, pp. 9172-9177, 2012.