Structural and optical characterization of ZnO/MgxZn 1-xO multiple quantum wells based random laser diodes

ACS Applied Materials and Interfaces

Volumn 4, Issue 12, 2012, Pages 7043-7046

  Jiang, Qike ^a   Zheng, He ^a   Wang, Jianbo ^a   Long, Hao ^a   Fang, Guojia ^a  

^a WUHAN UNIVERSITY   (China)

Author keywords

multiple quantum wells; random laser diode; TEM; ZnO MgxZn 1 xO

Indexed keywords

ELECTRICAL EXCITATION; EPITAXIAL RELATIONSHIPS; MGO; NANOSCALED; OPTICAL CHARACTERIZATION; RANDOM LASERS; RANDOM LASING; SHARP CONTRAST; ZNO;

GALLIUM NITRIDE; LASER BEAMS; LASERS; OPTICAL PROPERTIES; PHASE SEPARATION; SEMICONDUCTOR LASERS; TRANSMISSION ELECTRON MICROSCOPY; ZINC; ZINC OXIDE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84871654894     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am302378v     Document Type: Article

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