Nearly-zero thermal expansion along the layer-stacking axis of ZnSe-based inorganic-organic hybrid semiconductor materials

European Journal of Inorganic Chemistry

Volumn , Issue 36, 2012, Pages 5966-5971

  Zhang, Xiao ^a   Ren, Yang ^b   Roushan, Mojgan ^a   Li, Jing ^a  

^a RUTGERS UNIVERSITY   (United States)

^b ARGONNE NATIONAL LABORATORY   (United States)

Author keywords

Organic inorganic hybrid composites; Selenium; Semiconductors; Thermal effects; Zinc

Indexed keywords

CRYSTAL SYMMETRY; II-VI SEMICONDUCTORS; ORGANIC-INORGANIC MATERIALS; SELENIUM; WIDE BAND GAP SEMICONDUCTORS; ZINC; ZINC SELENIDE;

ETHYLENE DIAMINE; GENERAL FORMULAS; INORGANIC-ORGANIC HYBRID; LAYER STACKING; ORGANIC-INORGANIC HYBRID COMPOSITES; ORGANICS; TEMPERATURE RANGE; UNIT CELL PARAMETERS; ZERO THERMAL EXPANSION; ZINC;

THERMAL EXPANSION;

EID: 84871003734     PISSN: 14341948     EISSN: 10990682     Source Type: Journal    
DOI: 10.1002/ejic.201200687     Document Type: Article

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