Precise relationship between voltage and frequency at the appearance of negative capacitance in InGaN diodes

Applied Physics Letters

Volumn 101, Issue 23, 2012, Pages

  Feng, L F ^a,b   Li, Y ^a,c   Li, D ^b   Hu, X D ^b   Yang, W ^b   Wang, C D ^a,b   Xing, Q Y ^c  

^a TIANJIN UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

^c Hainan Technology and Business College   (China)

Author keywords

[No Author keywords available]

Indexed keywords

NEGATIVE CAPACITANCE; P-N JUNCTION; PHYSICAL EQUATIONS; RECOMBINATION LIFETIME;

CAPACITANCE; LIGHT EMITTING DIODES; SEMICONDUCTOR JUNCTIONS;

GALLIUM COMPOUNDS;

EID: 84870945700     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4769807     Document Type: Article

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