Band alignment of epitaxial ZnS/Zn3P2 heterojunctions

Journal of Applied Physics

Volumn 112, Issue 9, 2012, Pages

  Bosco, Jeffrey P ^a   Demers, Steven B ^a   Kimball, Gregory M ^a   Lewis, Nathan S ^a   Atwater, Harry A ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANDERSONS; BAND ALIGNMENTS; CONDUCTION BAND OFFSET; DENSITY FUNCTIONAL THEORY CALCULATIONS; DENSITY-OF-STATES; ENERGY-BAND ALIGNMENT; HETEROJUNCTION DEVICES; INSULATING LAYERS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; PHOTOVOLTAICS; SULFUR 2P; TYPE II; VALENCE-BAND MAXIMUMS; VALENCE-BAND OFFSET;

ALIGNMENT; BINDING ENERGY; DENSITY FUNCTIONAL THEORY; EPITAXIAL GROWTH; MIS DEVICES; MOLECULAR BEAM EPITAXY; PHOSPHORUS; SULFUR; VALENCE BANDS; ZINC; ZINC SULFIDE;

HETEROJUNCTIONS;

EID: 84870917382     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4759280     Document Type: Article

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