Microwave frequency comb attributed to the formation of dipoles at the surface of a semiconductor by a mode-locked ultrafast laser

Applied Physics Letters

Volumn 101, Issue 23, 2012, Pages

  Hagmann, M J ^a   Pandey, S ^b   Nahata, A ^b   Taylor, A J ^c   Yarotski, D A ^c  

^a NewPath Research LLC   (United States)

^b UNIVERSITY OF UTAH   (United States)

^c CENTER FOR INTEGRATED NANOTECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY COMBS; MODE-LOCKED; SURGE CURRENT; TERAHERTZ RADIATION; TUNNELING CURRENT; TUNNELING JUNCTIONS;

SEMICONDUCTOR JUNCTIONS; ULTRAFAST LASERS;

SATURABLE ABSORBERS;

EID: 84870908097     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768952     Document Type: Article

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