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Volumn 97, Issue , 2005, Pages 63-98

Terahertz radiation from semiconductor surfaces

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EID: 33748771192     PISSN: 03034216     EISSN: 14370859     Source Type: Book Series    
DOI: 10.1007/10828028_3     Document Type: Article
Times cited : (35)

References (67)
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    • N. Sarukura, H.Ohtake, S. Izamida, Z. Liu: J. Appl. Phys. 84, 1 (1998) according to a recallbration of the bolometer sensitivity by Sarukum et al., the total radiation power from an InAs surface under a magnetic field of 1 T is corrected to be about 50 μW with a pump power of 1 W. 1398 (2000) I.;
    • (1998) J. Appl. Phys. , vol.84 , pp. 1
    • Sarukura, N.1    Ohtake, H.2    Izamida, S.3    Liu, Z.4
  • 35
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    • Coherent THz emission in semiconductors
    • K. Tsen (Ed.), Semicond. Semimet. (Academic, New York) 79
    • Coherent THz emission in semiconductors, in K. Tsen (Ed.): Ultrafast Physical Properties in Semiconductors, Semicond. Semimet. 67 (Academic, New York 2001) 79
    • (2001) Ultrafast Physical Properties in Semiconductors , vol.67
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    • For the pump-probe experiment of coherent phonons, see for example, W. Kütt: Adv. Solid State Phys. 32, 113 (1992),
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    • Kütt, W.1
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    • Appl. Opt. 36, 7853-7859 (1997);
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    • J. Appl. Phys. 80, 4214-4216 (1996);
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    • Opt. Lett. 15, 323-325 (1990, 1995),
    • (1990) Opt. Lett. , vol.15 , pp. 323-325
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.