Band-edge density-of-states and carrier concentrations in intrinsic and p-type CuIn1-xGaxSe2

Journal of Applied Physics

Volumn 112, Issue 10, 2012, Pages

  Chen, Rongzhen ^a   Persson, Clas ^a,b  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b UNIVERSITY OF OSLO   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

BAND DISPERSIONS; BAND EDGE; CONSTANT ENERGY SURFACES; DENSITY-OF-STATES; ELECTRONIC TRANSPORT; EXCITATION CONDITIONS; FREE CARRIER CONCENTRATION; FULL BAND; NON PARABOLICITY; P-TYPE; PARAMETERIZED;

CARRIER CONCENTRATION; COPPER COMPOUNDS; ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM;

DISPERSIONS;

EID: 84870697429     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4767120     Document Type: Article

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