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AIP Advances

Volumn 2, Issue 1, 2012, Pages

Linear and nonlinear intraband optical properties of ZnO quantum dots embedded in SiO2 matrix

(3) Maikhuri, Deepti a Purohit, S P a Mathur, K C a

a JAYPEE INSTITUTE OF INFORMATION TECHNOLOGY (India)

Author keywords

[No Author keywords available]

Indexed keywords

GROUND STATE; II-VI SEMICONDUCTORS; LOW-K DIELECTRIC; MAGNETIC SEMICONDUCTORS; MATRIX ALGEBRA; NANOCRYSTALS; OXIDE MINERALS; PHOTOIONIZATION; REFRACTIVE INDEX; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS; SILICA; WIDE BAND GAP SEMICONDUCTORS; ZINC OXIDE;

CONFINEMENT POTENTIAL; DIELECTRIC MATRIXES; EFFECTIVE MASS APPROXIMATION; OSCILLATOR STRENGTHS; PARABOLIC CONFINEMENTS; PHOTOIONIZATION CROSS SECTION; SPHERICAL QUANTUM DOT; THIRD-ORDER NONLINEAR SUSCEPTIBILITY;

NONLINEAR OPTICS;

EID: 84870695331 PISSN: None EISSN: 21583226 Source Type: Journal
DOI: 10.1063/1.3693405 Document Type: Article

Times cited : (27)

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