Effect of post-sulfurization on the composition, structure and optical properties of Cu 2 ZnSnS 4 thin films deposited by sputtering from a single quaternary target

Applied Surface Science

Volumn 264, Issue , 2013, Pages 133-138

  He, Jun ^a   Sun, Lin ^a   Zhang, Kezhi ^a   Wang, Weijun ^a   Jiang, Jinchun ^b   Chen, Ye ^a   Yang, Pingxiong ^a   Chu, Junhao ^a,b  

^a EAST CHINA NORMAL UNIVERSITY   (China)

^b Shanghai Center for Photovoltaics   (China)

Author keywords

Composition; Optical properties; Post sulfurization; Sputtering; Structure

Indexed keywords

ANNEALING; CHEMICAL ANALYSIS; COMPRESSIVE STRESS; COPPER COMPOUNDS; ENERGY GAP; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; RAMAN SCATTERING; SCANNING ELECTRON MICROSCOPY; SPUTTERING; STRUCTURE (COMPOSITION); SUBSTRATES; TIN COMPOUNDS; X RAY DIFFRACTION; ZINC COMPOUNDS;

CZTS THIN FILMS; HEATED GLASS SUBSTRATES; NON-STOICHIOMETRIC; POST-SULFURIZATION; QUATERNARY TARGETS; RADIO FREQUENCY MAGNETRON SPUTTERING; SPECTRA ANALYSIS; TRANSMISSION SPECTRUMS;

THIN FILMS;

EID: 84870556847     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2012.09.140     Document Type: Article

References (28)

1. K. Ito, and T. Nakazawa Electrical and optical properties of stannite-type quaternary semiconductor thin films Jpn. J. Appl. Phys. 27 1988 2094 2097
2. 4 thin films Sol. Energy Mater. Sol. Cells 65 2001 141 148
3. 4 solar cell Prog. Photovolt. Res. Appl. 20 2012 6
4. 4 absorber Prog. Photovolt. Res. Appl. 2011 10.1002/pip.1174
5. 4 thin films Thin Solid Films 517 2009 2524 2526
6. 4 thin films by coevaporation Phys. Status Solidi C 3 2006 2844 2847
7. 4 -based thin film solar cells by using preferential etching technique Appl. Phys. Express 1 2008 041201
8. 4 (CZTS) absorber layer using different stacking orders in precursor thin films Sol. Energy Mater. Sol. Cells 95 2011 3202 3206
9. 4 thin films prepared by rf magnetron sputtering process Sol. Energy Mater. Sol. Cells 75 2003 155 162
10. 4 films by electrodeposition using ionic liquids Sol. Energy Mater. Sol. Cells 94 2010 207 211
11. 4 absorber layers by an electrodeposition- annealing route Thin Solid Films 517 2009 2481 2484
12. 4 thin films by spray pyrolysis Phys. Status Solidi A 207 2010 149 156
13. T.K. Todorov, K.B. Reuter, and D.B. Mitzi High-efficiency solar cell with earth - abundant liquid-processed absorber Adv. Mater. 22 2010 1 4
14. 4 thin films deposited by pulsed laser deposition method J. Alloys Compd. 529 2012 34 37
15. 2 S atmosphere for solar cell absorber prepared by ULSED laser deposition Jpn. J. Appl. Phys. 47 2008 602 604
16. 4 thin films deposited by pulsed laser deposition method Sol. Energy Mater. Sol. Cells 95 2011 2907 2913
17. 2 thin films by sputtering from a single quaternary chalcogenide target Prog. Photovolt. Res. Appl. 19 2011 160 164
18. 2 thin films and devices sputtered from a single target without additional selenization Thin Solid Films 519 2011 7763 7765
19. 4 thin films by RF magnetron sputtering from binary chalcogenide targets J. Phys. Chem. Solids 68 2007 1908 1913
20. 4 films from stacked metallic layers Phys. Status Solidi C 7 2010 913
21. 4 thin films Appl. Phys. Lett. 97 2010 092111
22. 4 solid solutions: an experimental study J. Alloys Compd. 511 2012 129 132
23. 4 thin films Thin Solid Films 517 2009 2519 2523
24. 2 thin films J. Mater. Sci.: Mater. El. 7 1996 213 219
25. M. Venkatachalam, M.D. Kannan, S. Jayakumar, R. Balasundaraprabhu, and N. Muthukumarasamy Effect of annealing on the structural properties of electron beam deposited CIGS thin films Thin Solid Films 516 2008 6848 6852
26. B. Welber, M. Cardona, C.K. Kim, and S. Rodriguez Dependence of the direct energy gap of GaAs on hydrostatic pressure Phys. Rev. B 12 1975 5729 5737
27. E. Ghahramani, and J.E. Sipe Pressure dependence of the band gaps of semiconductors Phys. Rev. B 40 1989 12516 12519
28. 4 thin film solar cell efficiency Sol. Energy Mater. Sol. Cells 95 2011 838 842