Effect of annealing temperature on the copper nanoparticles deposited on the silicon nanoporous pillar array

Materials Science in Semiconductor Processing

Volumn 16, Issue 1, 2013, Pages 10-14

  Yang, Xiao Hui ^a   Zeng, Fan Guang ^b   Li, Xin Jian ^c  

^a NORTH CHINA INSTITUTE OF WATER CONSERVANCY AND HYDROELECTRIC POWER   (China)

^b ZHENGZHOU INSTITUTE OF AERONAUTICAL INDUSTRY MANAGEMENT   (China)

^c ZHENGZHOU UNIVERSITY   (China)

Author keywords

Annealing; Copper silicon nanocomposite system (Cu Si NPA); Ostwald ripening; Particle migration and coalescence

Indexed keywords

AFTER-HEAT TREATMENT; ANNEALING TEMPERATURES; AVERAGE SIZE; COPPER NANOPARTICLES; CRYSTALLINITIES; CU NANOPARTICLES; ELEVATED TEMPERATURE; IMMERSION PLATING; MORPHOLOGICAL CHANGES; NANOCOMPOSITE SYSTEMS; PARTICLE MIGRATION AND COALESCENCES; SILICON NANOPOROUS PILLAR ARRAY; XRD;

COALESCENCE; NANOCOMPOSITES; NANOPARTICLES; OSTWALD RIPENING; SILICON;

ANNEALING;

EID: 84870447092     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2012.07.007     Document Type: Article

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