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Volumn 2, Issue 9, 2012, Pages 1270-1277

Photoluminescence in Er-doped Ge-As-Se chalcogenide thin films

Author keywords

[No Author keywords available]

Indexed keywords

CHALCOGENIDE FILMS; CHALCOGENIDE THIN FILMS; ER-DOPED; ION IMPLANTED; POST-IMPLANT ANNEALING;

EID: 84870381580     PISSN: None     EISSN: 21593930     Source Type: Journal    
DOI: 10.1364/OME.2.001270     Document Type: Article
Times cited : (16)

References (25)
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  • 7
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    • (2008) IEEE J. Sel. Top. Quantum Electron. , vol.14 , Issue.5 , pp. 1353-1360
    • Kasap, S.1    Koughia, K.2    Soundararajan, G.3    Brik, M.G.4
  • 13
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    • Lyubin, V.1    Klebanov, M.2    Sfez, B.3    Ashkinadze, B.4
  • 17
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    • Effect of annealing on the photoluminescence in sputtered films of Er-doped chalcogenide glasses
    • C. Vigreux-Bercovici, A. Pradel, A. Fuchs, and J. Fick, "Effect of annealing on the photoluminescence in sputtered films of Er-doped chalcogenide glasses," Phys. Chem. Glasses-B 47(2), 162-166 (2006).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.