Photoluminescence in Er-implanted amorphous Ge-S-Ga thin films

Journal of Optoelectronics and Advanced Materials

Volumn 7, Issue 3, 2005, Pages 1271-1276

  Ivanova, Z G ^a   Koughia, K ^b   Tonchev, D ^b   Pivin, J C ^c   Kasap, S O ^b  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

^b UNIVERSITY OF SASKATCHEWAN   (Canada)

^c 91405 Orsay Campus   (France)

Author keywords

Chalcogenide glasses; Ion implantation; Photoluminescence; Rare earth doping; Thin films

Indexed keywords

ERBIUM COMPOUNDS; GALLIUM COMPOUNDS; GERMANIUM COMPOUNDS; GLASS; ION IMPLANTATION; IONS; PHOTOLUMINESCENCE; RARE EARTHS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING;

CHALCOGENIDE GLASS; DEPOSITED FILMS; DEPTH DISTRIBUTION; GLASS STRUCTURE; PARTIAL RESTORATION; PHOTOLUMINESCENCE PROPERTIES; RARE EARTH DOPING; RUTHERFORD BACKSCATTERING SPECTROMETRY;

THIN FILMS;

EID: 22544459059     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

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