A simple approach to the polytypism in SiC

Journal of Crystal Growth

Volumn 362, Issue 1, 2013, Pages 207-210

  Ito, Tomonori ^a   Akiyama, Toru ^a   Nakamura, Kohji ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

A1. Computer simulations; A1. Crystal structure; A1. Defects; B2. Semiconducting silicon compounds

Indexed keywords

AB INITIO CALCULATIONS; ENERGY DIFFERENCES; HIGH TEMPERATURE; INTERATOMIC BONDS; IONIC CHARGE; IONICITIES; LOW TEMPERATURES; POLYTYPISM; SIMPLE APPROACH; VACANCY FORMATION; WURTZITES; ZINC BLENDE;

COMPUTER SIMULATION; SEMICONDUCTING SILICON COMPOUNDS; ZINC SULFIDE;

SILICON CARBIDE;

EID: 84870302079     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.07.031     Document Type: Conference Paper

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