Theoretical investigations for the polytypism in semiconductors

Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 141-144

  Ito, Tomonori ^a   Kondo, Tomoyuki ^a   Akiyama, Toru ^a   Nakamura, Kohji ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

A1. Computer simulations; A1. Crystal structures; A1. Defects; B2. Semiconducting IIVI materials; B2. Semiconducting silicon compounds

Indexed keywords

A1. COMPUTER SIMULATIONS; A1. CRYSTAL STRUCTURES; A1. DEFECTS; B2. SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTING II-VI MATERIALS;

CALCULATIONS; COMPUTATIONAL METHODS; COMPUTER SIMULATION; DEFECTS; POLYMORPHISM; SEMICONDUCTING SILICON; SILICON CARBIDE; ZINC SULFIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79952738018     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.089     Document Type: Conference Paper

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