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Solid State Communications

Volumn 153, Issue 1, 2013, Pages 17-22

Metallic and semimetallic properties of doped graphene and boron nitride planes

(2) Mousavi, Hamze a Moradian, Rostam a,b

a RAZI UNIVERSITY (Iran)

b INSTITUTE FOR STUDIES IN THEORETICAL PHYSICS AND MATHEMATICS IPM (Iran)

Author keywords

A. Boron nitride; A. Graphene; B. CPA; B. Random tight binding

Indexed keywords

A. BORON-NITRIDE; B. CPA; CARBON ATOMS; DENSITY OF STATE; DOPING CONCENTRATION; EFFECTS OF IMPURITIES; FINITE DENSITY; GRAPHENE PLANE; GRAPHENE SHEETS; GREEN'S FUNCTION TECHNIQUE; HEXAGONAL BORON NITRIDE; HIGH CONCENTRATION; IMPURITY ATOMS; METALLIC PROPERTIES; NITROGEN ATOM; TIGHT BINDING; TIGHT BINDING MODEL;

ATOMS; BINDING ENERGY; BORON NITRIDE; DOPING (ADDITIVES); IMPURITIES; NITRIDES;

GRAPHENE;

EID: 84870301002 PISSN: 00381098 EISSN: None Source Type: Journal
DOI: 10.1016/j.ssc.2012.10.022 Document Type: Article

Times cited : (4)

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