Thermoelectric performance of Si0.8 Ge0.2 nanowire arrays

IEEE Transactions on Electron Devices

Volumn 59, Issue 12, 2012, Pages 3193-3198

  Xu, Bin ^a   Li, Chuanbo ^a   Thielemans, Kris ^b   Myronov, Maxim ^c   Fobelets, Kristel ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b Algorithms and Software Consulting Ltd   (United Kingdom)

^c UNIVERSITY OF WARWICK   (United Kingdom)

Author keywords

Nanowire (NW) arrays (NWAs); SiGe; thermoelectric

Indexed keywords

COPPER; GERMANIUM; NANOWIRES; SILICON ALLOYS; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

ARBITRARY NUMBER; ELECTRICAL CONTACT RESISTANCE; GE CONCENTRATIONS; HEATING POWER; INTERNAL TEMPERATURE; MATRIX MODEL; MAXIMUM OUTPUT POWER; METAL-ASSISTED CHEMICAL ETCHING; NANOWIRE ARRAYS; OUTPUT POWER; ROOM TEMPERATURE; SEMICONDUCTOR COMPOSITE; SIGE; TEMPERATURE DIFFERENCES; THERMAL TRANSPORT; THERMOELECTRIC; THERMOELECTRIC GENERATORS; THERMOELECTRIC PERFORMANCE;

SILICON;

EID: 84870292298     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2215610     Document Type: Article

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