Ambipolar field-effect transistors with bilayered thiophene/phenylene co-oligomers

Organic Electronics

Volumn 14, Issue 1, 2013, Pages 80-85

  Imai, Shunta ^a   Yanagi, Hisao ^a   Hotta, Shu ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Ambipolar characteristics; Organic field effect transistor; Thiophene phenylene co oligomers; Vapor deposited bilayer

Indexed keywords

ALUMINUM ALLOYS; BINARY ALLOYS; ELECTRODES; GOLD ALLOYS; LITHIUM ALLOYS; OLIGOMERS; THIOPHENE; VAPOR DEPOSITION;

AMBIPOLAR CHARACTERISTICS; AMBIPOLAR FIELD; BI-LAYER; DIELECTRIC LAYER; NEGATIVE GATE; SOURCE/DRAIN ELECTRODES; THIOPHENE/PHENYLENE CO-OLIGOMERS; TRIFLUOROMETHYL;

ORGANIC FIELD EFFECT TRANSISTORS;

EID: 84870199225     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2012.10.021     Document Type: Article

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