Microstructure and energy-storage performance of PbO-B2O 3-SiO2-ZnO glass added (Pb0.97La 0.02)(Zr0.97Ti0.03)O3 antiferroelectric thick films

Materials Research Bulletin

Volumn 48, Issue 1, 2013, Pages 84-88

  Hao, Xihong ^a,b   Wang, Peng ^b   Zhang, Xuefeng ^a   Xu, Jinbao ^c  

^a Key Laboratory of Integrated Exploitation of Bayan Obo Multi Metal Resources   (China)

^b INNER MONGOLIA UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^c XINJIANG TECHNICAL INSTITUTE OF PHYSICS AND CHEMISTRY   (China)

Author keywords

A. Electronic materials; D. Electrical properties; D. Energy storage

Indexed keywords

ALUMINA SUBSTRATES; ANTI FERROELECTRICS; ELECTRONIC MATERIALS; GLASS ADDITION; GLASS POWDER; PLZT; SCREEN PRINTING METHODS; ZNO;

ALUMINA; ANTIFERROELECTRICITY; ELECTRIC PROPERTIES; GLASS; LEAD; LEAD OXIDE; MICROSTRUCTURE; STORAGE (MATERIALS); THICK FILMS; ZINC OXIDE; ZIRCONIUM;

LANTHANUM;

EID: 84869507117     PISSN: 00255408     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.materresbull.2012.10.005     Document Type: Article

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