SCOPUS 정보 검색 플랫폼

Volumn 24, Issue 16, 2012, Pages 2154-2158

Controlling bulk conductivity in topological insulators: Key role of anti-site defects

(8) Scanlon, D O a King, P D C b Singh, R P c De La Torre, A b Walker, S McKeown b Balakrishnan, G c Baumberger, F b Catlow, C R A a

a UNIVERSITY COLLEGE LONDON (United Kingdom)

b UNIVERSITY OF ST ANDREWS (United Kingdom)

c UNIVERSITY OF WARWICK (United Kingdom)

Author keywords

ARPES; bulk conductivity; defects; density functional theory; topological insulators

Indexed keywords

ANGLE-RESOLVED PHOTOEMISSION; ANTI-SITE DEFECT; ARPES; BULK CONDUCTIVITIES; BULK TRANSPORT; FIRST-PRINCIPLES CALCULATION; NATIVE DEFECT; OPTIMAL GROWTH; TOPOLOGICAL INSULATORS;

CALCULATIONS; ELECTRIC INSULATORS;

DEFECTS;

ALLOY; BISMUTH; SELENIUM; TELLURIUM;

ARTICLE; CHEMISTRY; IMPEDANCE;

ALLOYS; BISMUTH; ELECTRIC IMPEDANCE; SELENIUM; TELLURIUM;

EID: 84860338635 PISSN: 09359648 EISSN: 15214095 Source Type: Journal
DOI: 10.1002/adma.201200187 Document Type: Article

Times cited : (295)

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