Industrially feasible casting-mono crystalline solar cells with PECVD AlOx/SiNx rear passivation stack towards 19.6% efficiency

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 1125-1128

  Sun, Baoming ^a   Sheng, Jian ^a   Yuan, Shengzhao ^a   Zhang, Chun ^a   Feng, Zhiqiang ^a   Huang, Qiang ^a  

^a State Key Laboratory for Photovoltaic Science and Technology   (China)

Author keywords

Casting mono crystalline silicon; Passivation; PECVD AlOx

Indexed keywords

ADDITIONAL COSTS; ALUMINUM OXIDES; AVERAGE LIFETIME; BATCH SIZES; CELL EFFICIENCY; CHEMICAL PASSIVATION; CRYSTALLINE SILICON SOLAR CELLS; CRYSTALLINE SILICONS; CRYSTALLINE SOLAR CELLS; EFFICIENCY GAIN; FAST DEPOSITION; FIELD-EFFECT; GOOD STABILITY; INDUSTRIAL PRODUCTION LINES; MINORITY CARRIER LIFETIMES; MULTI-CRYSTALLINE SILICON; NEGATIVE CHARGE; PRODUCTION COST; RESEARCH AND DEVELOPMENT;

ATOMIC LAYER DEPOSITION; CRYSTALLINE MATERIALS; EFFICIENCY; MONOCRYSTALLINE SILICON; NANOSTRUCTURED MATERIALS; RESEARCH; SILICON NITRIDE; SILICON WAFERS;

PASSIVATION;

EID: 84869439942     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317800     Document Type: Conference Paper

References (4)

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4. P. Saint-Cast, E. Billot, P. Olwal, S. KUhnhold, A. Richter, M. Hofmann, J. Rentsch, R. Preu, "Surface Passivation of Highly and Lowly Doped P-type Silicon Surfaces with PECVD Al203 for Industrially Applicable Solar Cell Concepts," in 26 European Photovoltaic Solar Energy Conference and Exhibition, 2011, p. 1125-1128.