Effect of shunt resistance on the performance of mc-Silicon solar cells: A combined electro-optical and thermal investigation

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2012, Pages 1241-1245

  Barbato, M ^a   Meneghini, M ^a   Giliberto, V ^a   Giaffreda, D ^b,c   Magnone, P ^b,c   De Rose, R ^b,c   Fiegna, C ^b,c   Meneghesso, G ^a,c  

^a UNIVERSITY OF PADOVA   (Italy)

^b UNIVERSITY OF BOLOGNA   (Italy)

^c IUNET   (Italy)

Author keywords

dark I V characterization; LED solar simulator; mc Si solar cell; modeling; thermographic pulsed characterization

Indexed keywords

CIRCUIT SIMULATORS; ELECTRICAL CHARACTERISTIC; ELECTRICAL MODELS; ELECTRO-OPTICAL; ELECTRO-OPTICAL CHARACTERISTICS; FILL FACTOR; HOT SPOT; ILLUMINATION CONDITIONS; ILLUMINATION LEVELS; IRRADIATION LEVELS; IV CHARACTERIZATION; MULTICRYSTALLINE SILICON (MC-SI); SHUNT RESISTANCES; SOLAR SIMULATOR; THERMOGRAPHIC MEASUREMENT;

CHARACTERIZATION; CIRCUIT SIMULATION; LIGHT EMITTING DIODES; MODELS; POLYSILICON;

SILICON SOLAR CELLS;

EID: 84869412383     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2012.6317827     Document Type: Conference Paper

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