Electronically nonalloyed state of a statistical single atomic layer semiconductor alloy

Nano Letters

Volumn 12, Issue 11, 2012, Pages 5845-5849

  Ebert, Ph ^a   Landrock, S ^a   Jiang, Y ^b   Wu, K H ^c   Wang, E G ^b   Dunin Borkowski, R E ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b PEKING UNIVERSITY   (China)

^c INSTITUTE OF PHYSICS   (China)

Author keywords

electronic structure; scanning tunneling spectroscopy; Single atomic layer semiconductor alloy

Indexed keywords

ALLOY LAYERS; ATOMIC LAYER; CONFINED STRUCTURES; ELECTRONIC LOCALIZATION; NEW ALLOYS; SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY; SCANNING TUNNELING SPECTROSCOPY; SEMI-CONDUCTOR ALLOYS;

ATOMS; CERIUM ALLOYS; ELECTRONIC STRUCTURE; GALLIUM; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON; SILICON; SILICON ALLOYS;

GALLIUM ALLOYS;

EID: 84869172037     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl303197a     Document Type: Article

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