Influence of thermal annealing on the carrier extraction in Ge/Si quantum dot solar cells

Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

  Tayagaki, Takeshi ^a,b   Usami, Noritaka ^c   Kanemitsu, Yoshihiko ^a  

^a KYOTO UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER EXTRACTION; GE QUANTUM DOT; PHOTOLUMINESCENCE MEASUREMENTS; PHOTON ABSORPTIONS; PIN DIODE; QUANTUM DOT SOLAR CELLS; SOLAR SPECTRUM; THERMAL ANNEALING PROCESS; THERMAL-ANNEALING;

ANNEALING; CONVERSION EFFICIENCY; GERMANIUM; PHOTONS; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; SILICON;

SOLAR CELLS;

EID: 84869139667     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.10NE24     Document Type: Article

References (21)

1. A. D. Yoffe: Adv. Phys. 50 (2001) 1.
2. M. A. Green: Third Generation Photovoltaics (Springer, Heidelberg, 2003).
3. V. Aroutiounian, S. Petrosyan, A. Khachatryan, and K. Touryan: J. Appl. Phys. 89 (2001) 2268.
4. D. Alonso-Álvarez, A. G. Taboada, J. M. Ripalda, B. Alen, Y. González, L. González, J. M. García, F. Briones, A. Martí, A. Luque, A. M. Sánchez, and S. I. Molina: Appl. Phys. Lett. 93 (2008) 123114.
5. Y. Okada, R. Oshima, and A. Tanaka: J. Appl. Phys. 106 (2009) 024306.
6. D. Guimard, R. Morihara, D. Bordel, K. Tanabe, Y. Wakayama, M. Nishioka, and Y. Arakawa: Appl. Phys. Lett. 96 (2010) 203507.
7. T. Sugaya, S. Furue, H. Komaki, T. Amano, M. Mori, K. Komori, S. Niki, O. Numakami, and Y. Okano: Appl. Phys. Lett. 97 (2010) 183104.
8. A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Suzuki, K. Nakajima, and Y. Shiraki: Appl. Phys. Lett. 83 (2003) 1258.
9. A. Alguno, N. Usami, T. Ujihara, K. Fujiwara, G. Sazaki, K. Nakajima, K. Sawano, and Y. Shiraki: Appl. Phys. Lett. 84 (2004) 2802.
10. D. J. Robbins, L. T. Canham, S. J. Barnett, A. D. Pitt, and P. Calcott: J. Appl. Phys. 71 (1992) 1407.
11. J. Tersoff, C. Teichert, and M. Lagally: Phys. Rev. Lett. 76 (1996) 1675.
12. T. Tayagaki, S. Fukatsu, and Y. Kanemitsu: Phys. Rev. B 79 (2009) 041301(R).
13. T. Tayagaki, S. Fukatsu, and Y. Kanemitsu: J. Phys. Soc. Jpn. 79 (2010) 013701.
14. T. Tayagaki, S. Fukatsu, and Y. Kanemitsu: Phys. Status Solidi C 8 (2011) 1049.
15. T. Tayagaki, K. Ueda, S. Fukatsu, and Y. Kanemitsu: J. Phys. Soc. Jpn. 81 (2012) 064712.
16. C. M. A. Kapteyn, M. Lion, R. Heitz, D. Bimberg, C. Miesner, T. Asperger, K. Brunner, and G. Abstreiter: Appl. Phys. Lett. 77 (2000) 4169.
17. K. Ueda, T. Tayagaki, S. Fukatsu, and Y. Kanemitsu: J. Non-Cryst. Solids 358 (2012) 2122.
18. H. Sunamura, N. Usami, Y. Shiraki, and S. Fukatsu: Appl. Phys. Lett. 66 (1995) 3024.
19. A. S. Grove: Physics and Technology of Semiconductor Devices (Wiley, New York, 1967).
20. A. I. Yakimov, A. V. Dvurecheskii, A. I. Nikiforov, A. A. Bloshkin, A. V. Nenashev, and V. A. Volodin: Phys. Rev. B 73 (2006) 115333.
21. N. N. Ledentsov, J. Böhrer, M. Beer, F. Heirichsdorff, M. Grundmann, D. Binberg, S. V. Ivanov, B. Ya. Meltser, S. V. Shaposhnikov, I. N. Yassievich, N. N. Faleev, P. S. Kop'ev, and Zh. I. Alferov: Phys. Rev. B 52 (1995) 14058.