Development of novel aluminum-doped zinc oxide film and its application to solar cells

Japanese Journal of Applied Physics

Volumn 51, Issue 10 PART 2, 2012, Pages

  Kuramochi, Hideto ^a   Akiike, Ryo ^a   Iigusa, Hitoshi ^a   Tamano, Kimiaki ^a   Utsumi, Kentaro ^a   Shibutami, Tetsuo ^a   Sichanugrist, Porponth ^b   Konagai, Makoto ^b  

^a TOSOH CORPORATION   (Japan)

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM-DOPED ZINC OXIDE; AMORPHOUS SILICON (A-SI); AZO FILMS; CRATER SIZES; DC MAGNETRON SPUTTERING; ELECTRICAL AND OPTICAL PROPERTIES; ETCHING TIME; NEAR INFRARED; WET-CHEMICAL ETCHING;

ALUMINUM; DURABILITY; ELECTRIC PROPERTIES; NANOSTRUCTURED MATERIALS; OPTICAL PROPERTIES; SILICON; SILICON SOLAR CELLS; WET ETCHING; ZINC OXIDE;

OXIDE FILMS;

EID: 84869126060     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.51.10NB13     Document Type: Article

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