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Volumn 51, Issue 10 PART 2, 2012, Pages
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Optimization of gas-switching sequence for InGaAs/GaAsP superlattice structures using in situ wafer curvature monitoring
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Author keywords
[No Author keywords available]
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Indexed keywords
AVERAGE STRAIN;
CURVATURE MEASUREMENT;
GAAS;
HIGH-ACCURACY;
HYDROGEN PURGE;
INSERTION LAYERS;
METAL-ORGANIC VAPOR PHASE EPITAXY;
SUPER-LATTICE STRUCTURES;
SURFACE ATOMS;
WAFER CURVATURE;
GALLIUM ARSENIDE;
GROWTH KINETICS;
METALLORGANIC VAPOR PHASE EPITAXY;
OPTIMIZATION;
SEMICONDUCTING GALLIUM;
SEMICONDUCTING INDIUM;
WELLS;
CURVE FITTING;
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EID: 84869104855
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.51.10ND09 Document Type: Article |
Times cited : (11)
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References (11)
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