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Volumn 22, Issue 22, 2012, Pages 4696-4703

Magnetoresistive memory with ultralow critical current for magnetization switching

Author keywords

magnetic memory; spin reorientation transitions; spin transfer torque; strain; tunnel junctions

Indexed keywords

ANTIPARALLEL STATE; DATA WRITING; HIGH DENSITY; HIGH THERMAL STABILITY; LATTICE STRAIN; MAGNETIC MEMORIES; MAGNETIC RANDOM ACCESS MEMORIES; MAGNETIC TUNNEL JUNCTION; MAGNETIZATION REORIENTATION; MAGNETIZATION SWITCHING; MAGNETORESISTIVE MEMORIES; SPIN REORIENTATION TRANSITIONS; SPIN TRANSFER TORQUE; SPIN-POLARIZED CURRENTS; WRITING CURRENTS;

EID: 84869078808     PISSN: 1616301X     EISSN: 16163028     Source Type: Journal    
DOI: 10.1002/adfm.201200878     Document Type: Article
Times cited : (30)

References (35)
  • 9
    • 84869007334 scopus 로고    scopus 로고
    • Patent application PCT/EP2011/004016
    • N. A. Pertsev, H. Kohlstedt, Patent application PCT/EP2011/004016, 2011.
    • (2011)
    • Pertsev, N.A.1    Kohlstedt, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.