Ferromagnetic resonance in epitaxial films: Effects of lattice strains and voltage control via ferroelectric substrate

Physical Review B - Condensed Matter and Materials Physics

Volumn 84, Issue 1, 2011, Pages

  Pertsev, N A ^a,b   Kohlstedt, H ^a   Knochel R ^a  

^a UNIVERSITY OF KIEL   (Germany)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 79961212413     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.014423     Document Type: Article

References (42)

1. L. D. Landau and E. M. Lifshitz, Phys. Z. Sowjetunion 8, 153 (1935).
2. J. H. E. Griffiths, Nature 0028-0836 10.1038/158670a0 158, 670 (1946).
3. T. G. Philipps and H. M. Rosenberg, Rep. Prog. Phys. RPPHAG 0034-4885 10.1088/0034-4885/29/1/307 29, 285 (1966).
4. B. Heinrich and J. F. Cochran, Adv. Phys. ADPHAH 0001-8732 10.1080/00018739300101524 42, 523 (1993).
5. M. Farle, Rep. Prog. Phys. RPPHAG 0034-4885 10.1088/0034-4885/61/7/001 61, 755 (1998).
6. J. D. Adam and S. N. Stitzer, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.91516 36, 485 (1980).
7. W. S. Ishak, Proc. IEEE IEEPAD 0018-9219 10.1109/5.4393 76, 171 (1988). (Pubitemid 18596926)
8. H. How, W. Hu, C. Vittoria, L. C. Kempel, and K. D. Trott, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.370043 85, 4853 (1999).
9. N. Cramer, D. Lucic, R. E. Camley, and Z. Celinski, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.372883 87, 6911 (2000).
10. C. Kittel, Phys. Rev. PHRVAO 0031-899X 10.1103/PhysRev.73.155 73, 155 (1948).
11. J. R. MacDonald, Proc. Phys. Soc. A 0370-1298 10.1088/0370-1298/64/11/302 64, 968 (1951).
12. B. Z. Rameev, A. Gupta, F. YIldIz, L. R. Tagirov, and B. Aktaş, J. Magn. Magn. Mater. JMMMDC 0304-8853 10.1016/j.jmmm.2005.10.207 300, e526 (2006). (Pubitemid 43328710)
13. M. I. Bichurin, V. M. Petrov, and Yu. V. Kiliba, Ferroelectrics FEROA8 0015-0193 10.1080/00150199708222211 204, 311 (1997).
14. M. I. Bichurin, V. M. Petrov, Yu. V. Kiliba, and G. Srinivasan, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.66.134404 66, 134404 (2002).
15. M. I. Bichurin, I. A. Kornev, V. M. Petrov, A. S. Tatarenko, Yu. V. Kiliba, and G. Srinivasan, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.64. 094409 64, 094409 (2001).
16. Y. Chen, J. Wang, M. Liu, J. Lou, N. X. Sun, C. Vittoria, and V. G. Harris, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2986480 93, 112502 (2008).
17. J. Lou, M. Liu, D. Reed, Y. Ren, and N. X. Sun, Adv. Mater. 21, 4711 (2009).
18. B. Schulz and K. Baberschke, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.50.13467 50, 13467 (1994).
19. M.-T. Lin, J. Shen, W. Kuch, H. Jenniches, M. Klaua, C. M. Schneider, and J. Kirschner, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.55.5886 55, 5886 (1997).
20. A. Lisfi, C. M. Williams, L. T. Nguyen, J. C. Lodder, A. Coleman, H. Corcoran, A. Johnson, P. Chang, A. Kumar, and W. Morgan, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.76.054405 76, 054405 (2007).
21. A. Brandlmaier, S. Geprägs, M. Weiler, A. Boger, M. Opel, H. Huebl, C. Bihler, M. S. Brandt, B. Botters, D. Grundler, R. Gross, and S. T. B. Goennenwein, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.77.104445 77, 104445 (2008).
22. C. Bihler, M. Althammer, A. Brandlmaier, S. Geprägs, M. Weiler, M. Opel, W. Schoch, W. Limmer, R. Gross, M. S. Brandt, and S. T. B. Goennenwein, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.78.045203 78, 045203 (2008).
23. N. A. Pertsev, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.78.212102 78, 212102 (2008).
24. N. A. Pertsev and H. Kohlstedt, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3253706 95, 163503 (2009).
25. L. Neel, J. Phys. Rad. 0368-3842 10.1051/jphysrad:01954001504022500 15, 225 (1954).
26. M. J. Hurben and C. E. Patton, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.367194 83, 4344 (1998).
27. J. Smit and H. G. Beljers, Philips Res. Rep. 10, 113 (1955).
28. s =1.8×10 6 A/m [I. S. Jacobs, IEEE Trans. Magn. 0018-9464 10.1109/TMAG.1985.1063897 MAG- 21, 1306 (1985)]
29. 2 =-3×10 6 J/m 3 [R. C. Hall, J. Appl. Phys. 0021-8979 10.1063/1.1984643 31, S157 (1960)]
30. 44 =1×10 11 N/m 2 [J. P. Hirth and J. Lothe, Theory of Dislocations (McGraw-Hill, New York, 1968)]
31. s =3.5×10 5 A/m [J. Smit and H. P. J. Wijn, Ferrites (Wiley, New York, 1959)]
32. 2 =0 [H. Shenker, Phys. Rev. 0031-899X 10.1103/PhysRev.107.1246 107, 1246 (1957)]
33. 2 =-3.6×10 7 J/m 3 [V. J. Folen, in Magnetic and Other Properties of Oxides and Related Compounds, edited by, K.-H. Hellwege, and, A. M. Hellwege, Landolt- Börnstein, Vol. 3, Part 4b (Springer-Verlag, Berlin, 1970)]
34. 3 =1, which correspond to films with in-plane dimensions much larger than the film thickness.
35. J. Yin and W. Cao, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.1483918 92, 444 (2002). (Pubitemid 34783336)
36. The material parameters of Ni used in the numerical calculations are listed in Ref. 23.
37. The piezoelectric coefficients of PZN-4.5%PT were taken to be d 33 * = 2000 pm/V and d 31 * = -1000 pm/V (Ref. 29). Since the lattice parameter of PZN-4.5%PT differs considerably from that of Ni, a suitable buffer layer should be used for the fabrication of single-crystalline Ni films on this ferroelectric substrate.
38. S.-E. Park and T. R. Shrout, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.365983 82, 1804 (1997).
39. G. Srinivasan, A. S. Tatarenko, and M. Bichurin, Electron. Lett. ELLEAK 0013-5194 10.1049/el:20050925 41, 596 (2005). (Pubitemid 40749105)
40. A. S. Tatarenko, G. Srinivasan, and M. I. Bichurin, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.2198111 88, 183507 (2006).
41. H. Zheng, J. Wang, S. E. Lofland, Z. Ma, L. Mohaddes-Ardabili, T. Zhao, L. Salamanca-Riba, S. R. Shinde, S. B. Ogale, F. Bai, D. Viehland, Y. Jia, D. G. Schlom, M. Wuttig, A. Roytburd, and R. Ramesh, Science 0036-8075 10.1126/science.1094207 303, 661 (2004). (Pubitemid 38141629)
42. N. Benatmane, S. P. Crane, F. Zavaliche, R. Ramesh, and T. W. Clinton, Appl. Phys. Lett. APPLAB 0003-6951 10.1063/1.3319507 96, 082503 (2010).