Engineering heavily doped silicon for broadband absorber in the terahertz regime

Optics Express

Volumn 20, Issue 23, 2012, Pages 25513-25519

  Pu, Mingbo ^a   Wang, Min ^a   Hu, Chenggang ^a   Huang, Cheng ^a   Zhao, Zeyu ^a   Wang, Yanqin ^a   Luo, Xiangang ^a  

^a INSTITUTE OF OPTICS AND ELECTRONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FREQUENCY BANDS; OPTICAL PROPERTIES; SILICON;

BORON-DOPED SILICON; BROADBAND ABSORBERS; BROADBAND TERAHERTZ; DOPING CONCENTRATION; FREQUENCY-SELECTIVE; HEAVILY DOPED SILICONS; NATURALLY OCCURRING; RELATIVE ABSORPTIONS;

SILICON WAFERS;

EID: 84869077821     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.20.025513     Document Type: Article

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