Frontiers of mid-infrared lasers based on transition metal doped II-VI semiconductors

Journal of Luminescence

Volumn 133, Issue , 2013, Pages 268-275

  Mirov, S ^a,b   Fedorov, V ^a   Moskalev, I ^b   Mirov, M ^b   Martyshkin, D ^a  

^a UNIVERSITY OF ALABAMA AT BIRMINGHAM   (United States)

^b IPG Photonics   (United States)

Author keywords

Cr:II VI crystals; Fe:II VI crystals; II VI semiconductors; Mid IR lasers; Transitional metal doped lasers; Tunable lasers

Indexed keywords

COMPACT SYSTEM; CR-DOPED; II-VI SEMICONDUCTOR; LASER SOURCES; MID-IR LASERS; MIDINFRARED LASERS; OUTPUT ENERGY; OUTPUT POWER; PEAK POWER; PULSE DURATIONS; RECENT PROGRESS; SOLID-STATE MID-IR LASERS; SPECTROSCOPIC CHARACTERISTICS; TRANSITIONAL METALS; TUNABILITIES; ULTRAFAST LASER SYSTEMS;

CHROMIUM; LASER TUNING; TRANSITION METALS; ULTRAFAST LASERS;

SEMICONDUCTOR LASERS;

EID: 84868702167     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2011.09.040     Document Type: Conference Paper

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