메뉴 건너뛰기




Volumn 48, Issue 23, 2012, Pages 1470-1472

Low-cost single error correction multiple adjacent error correction codes

Author keywords

[No Author keywords available]

Indexed keywords

ADJACENT BITS; BIT-ERRORS; ERROR CORRECTION CODES; LOW AREA; PROTECTION TECHNIQUES; SOFT ERROR;

EID: 84868678998     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el.2012.3270     Document Type: Article
Times cited : (12)

References (5)
  • 1
    • 29344459216 scopus 로고    scopus 로고
    • Design for soft error mitigation
    • 10.1109/TDMR.2005.855790 1530-4388
    • Nicolaidis, M.: ' Design for soft error mitigation ', IEEE Trans. Device Mater. Reliab., 2005, 5, (3), p. 405-418 10.1109/TDMR.2005.855790 1530-4388
    • (2005) IEEE Trans. Device Mater. Reliab. , vol.5 , Issue.3 , pp. 405-418
    • Nicolaidis, M.1
  • 2
    • 77954030094 scopus 로고    scopus 로고
    • Impact of scaling on neutron-induced soft error rate in SRAMs from a 250nm to a 22nm design rule
    • 10.1109/TED.2010.2047907 0018-9383
    • Ibe, E., Taniguchi, H., Yahagi, Y., Shimbo, K., and Toba, T.: ' Impact of scaling on neutron-induced soft error rate in SRAMs from a 250nm to a 22nm design rule ', IEEE Trans. Electron Devices, 2010, 57, (7), p. 1527-1538 10.1109/TED.2010.2047907 0018-9383
    • (2010) IEEE Trans. Electron Devices , vol.57 , Issue.7 , pp. 1527-1538
    • Ibe, E.1    Taniguchi, H.2    Yahagi, Y.3    Shimbo, K.4    Toba, T.5
  • 3
    • 0033737766 scopus 로고    scopus 로고
    • Geometric effect of multiple-bit soft errors induced by cosmic ray neutrons on DRAMs
    • 10.1109/55.843160 0741-3106
    • Satoh, S., Tosaka, Y., and Wender, S.A.: ' Geometric effect of multiple-bit soft errors induced by cosmic ray neutrons on DRAMs ', IEEE Electron Device Lett., 2000, 21, (6), p. 310-312 10.1109/55.843160 0741-3106
    • (2000) IEEE Electron Device Lett. , vol.21 , Issue.6 , pp. 310-312
    • Satoh, S.1    Tosaka, Y.2    Wender, S.A.3
  • 4
    • 37549069366 scopus 로고    scopus 로고
    • Multiple bit upset tolerant memory using a selective cycle avoidance based SEC-DED-DAEC code
    • 25th, Berkeley, CA, USA
    • Dutta, A., and Touba, N.A.: ' Multiple bit upset tolerant memory using a selective cycle avoidance based SEC-DED-DAEC code ', 25th, IEEE VLSI Test Symp., Berkeley, CA, USA, 2007, p. 349-354
    • (2007) IEEE VLSI Test Symp. , pp. 349-354
    • Dutta, A.1    Touba, N.A.2
  • 5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.