Enhanced thermoelectric properties of bulk TiNiSn via formation of a TiNi 2Sn second phase

Applied Physics Letters

Volumn 101, Issue 18, 2012, Pages

  Douglas, Jason E ^a,b   Birkel, Christina S ^b   Miao, Mao Sheng ^b   Torbet, Chris J ^a   Stucky, Galen D ^a,b   Pollock, Tresa M ^a,b   Seshadri, Ram ^a,b  

^a University of California   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL CONDUCTIVITY; FIGURE OF MERITS; HALF-HEUSLER; HEUSLER; HIGH TEMPERATURE THERMOELECTRIC PROPERTIES; MICROMETER SCALE; SECOND PHASE; SECOND PHASE PARTICLES; THERMOELECTRIC PROPERTIES;

DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; THERMAL CONDUCTIVITY; THERMOELECTRIC EQUIPMENT;

TIN;

EID: 84868658560     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4765358     Document Type: Article

References (24)

1. J. R. Sootsman, D. Y. Chung, and M. G. Kanatzidis, Angew. Chem., Int. Ed. Engl. 48, 8616 (2009). 10.1002/anie.200900598
2. A. Shakouri, Annu. Rev. Mater. Res. 41, 399 (2011). 10.1146/annurev- matsci-062910-100445
3. M. Zebarjadi, K. Esfarjani, M. S. Dresselhaus, Z. F. Ren, and G. Chen, Energy Environ. Sci. 5, 5147 (2012). 10.1039/c1ee02497c
4. W. Kim, J. Zide, A. Gossard, D. Klenov, S. Stemmer, A. Shakouri, and A. Majumdar, Phys. Rev. Lett. 96, 045901 (2006). 10.1103/PhysRevLett.96.045901
5. J. He, J. R. Sootsman, S. N. Girard, J. C. Zheng, J. Wen, Y. Zhu, M. G. Kanatzidis, and V. P. Dravid, J. Am. Chem. Soc. 132, 8669 (2010). 10.1021/ja1010948
6. C. Yu, T.-J. Zhu, R.-Z. Shi, Y. Zhang, X.-B. Zhao, and J. He, Acta Mater. 57, 2757 (2009). 10.1016/j.actamat.2009.02.026
7. S. Bhattacharya, T. M. Tritt, Y. Xia, V. Ponnambalam, S. J. Poon, and N. Thadhani, Appl. Phys. Lett. 81, 43 (2002). 10.1063/1.1488698
8. H. Hohl, A. P. Ramirez, C. Goldmann, G. Ernst, B. Wölfing, and E. Bucher, J. Phys.: Condens. Matter 11, 1697 (1999). 10.1088/0953-8984/11/7/004
9. T. J. Zhu, K. Xiao, C. Yu, J. J. Shen, S. H. Yang, A. J. Zhou, X. B. Zhao, and J. He, J. Appl. Phys. 108, 044903 (2010). 10.1063/1.3475719
10. S. J. Poon, D. Wu, S. Zhu, W. Xie, T. M. Tritt, P. Thomas, and R. Venkatasubramanian, J. Mater. Res. 26, 2795 (2011). 10.1557/jmr.2011.329
11. Y. W. Chai and Y. Kimura, Appl. Phys. Lett. 100, 033114 (2012). 10.1063/1.3679377
12. H. Hazama, M. Matsubara, R. Asahi, and T. Takeuchi. J. Appl. Phys. 110, 063710 (2011). 10.1063/1.3633518
13. J. P. A. Makongo, D. K. Misra, X. Zhou, A. Pant, M. R. Shabetai, X. Su, C. Uher, K. L. Stokes, and P. F. P. Poudeu. J. Am. Chem. Soc. 133, 18843 (2011). 10.1021/ja206491j
14. G. Baldinozzi, J.-F. Bérar, M. Gautier-Soyer, and G. Calvarin, J. Phys.: Condens. Matter 9, 9731 (1997). 10.1088/0953-8984/9/45/004
15. G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996). 10.1016/0927-0256(96)00008-0
16. G. Kresse, M. Marsman, and J. Furthmüller, Vienna Ab-Initio Simulation Package: VASP the GUIDE, 2012.
17. P. E. Blöchl, Phys. Rev. B 50, 17953 (1994). 10.1103/PhysRevB.50. 17953
18. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
19. M. C. Flemings, Solidification Processing (McGraw-Hill, New York, 1974).
20. D.-Y. Jung, K. Kurosaki, C.-E. Kim, H. Muta, and S. Yama, J. Alloys Compd. 489, 328 (2010). 10.1016/j.jallcom.2009.09.139
21. F. Casper, T. Graf, S. Chadov, B. Balke, and C. Felser, Semicond. Sci. Technol. 27, 063001 (2012). 10.1088/0268-1242/27/6/063001
22. C. S. Birkel, W. Zeier, J. E. Douglas, B. Lettiere, C. Mills, G. Seward, A. Birkel, M. Snedaker, Y. Zhang, G. Snyder, T. Pollock, R. Seshadri, and G. D. Stucky, Chem. Mater. 24, 2558 (2012). 10.1021/cm3011343
23. H. Xiao, J. Tahir-Kheli, and W. A. Goddard, J. Phys. Chem. Lett. 2, 212 (2011). 10.1021/jz101565j
24. J. A. Kurzman, M.-S. Miao, and R. Seshadri, J. Phys.: Condens. Matter 23, 465501 (2011). 10.1088/0953-8984/23/46/465501