Half-Heusler compounds: Novel materials for energy and spintronic applications

Semiconductor Science and Technology

Volumn 27, Issue 6, 2012, Pages

  Casper, F ^a   Graf, T ^a   Chadov, S ^a   Balke, B ^a   Felser, C ^a,b  

^a JOHANNES GUTENBERG UNIVERSITY   (Germany)

^b MAX PLANCK INSTITUTE FOR CHEMICAL PHYSICS OF SOLIDS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTED MAGNETIC SEMICONDUCTORS; EDGE STATE; ELECTRON-DOPING; ELECTRONEGATIVITY DIFFERENCE; FUTURE ENERGIES; HALF-HEUSLER COMPOUND; HEUSLER COMPOUND; MULTI-FUNCTIONAL MATERIALS; NOVEL MATERIALS; SPINTRONIC APPLICATIONS; TECHNOLOGICAL APPLICATIONS; THERMOELECTRICS; VALENCE ELECTRON;

CHEMICAL BONDS; ELECTRONEGATIVITY; ENERGY GAP; MAGNETIC SEMICONDUCTORS; MAGNETOELECTRONICS; MANGANESE; SEMICONDUCTOR DOPING;

MANGANESE COMPOUNDS;

EID: 84860735286     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/6/063001     Document Type: Review

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