Improvement of thermoelectric properties for half-Heusler TiNiSn by interstitial Ni defects

Journal of Applied Physics

Volumn 110, Issue 6, 2011, Pages

  Hazama, Hirofumi ^a   Matsubara, Masato ^a   Asahi, Ryoji ^a   Takeuchi, Tsunehiro ^b  

^a Rd Management Section   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

FIRST-PRINCIPLES CALCULATION; HALF-HEUSLER; HEAVY ELEMENTS; HIGH POWER FACTOR; LOW THERMAL CONDUCTIVITY; NI ATOMS; RANDOMLY DISTRIBUTED; ROOM TEMPERATURE; SCATTERING CENTERS; THERMOELECTRIC PROPERTIES; THERMOELECTRICS; VACANT SITES; X RAY PHOTOEMISSION SPECTROSCOPY;

CALCULATIONS; CHEMICAL ELEMENTS; CRYSTAL DEFECTS; ELECTRIC POWER FACTOR; HAFNIUM; PHOTOELECTRON SPECTROSCOPY; THERMOELECTRIC EQUIPMENT; TIN; ZIRCONIUM;

THERMAL CONDUCTIVITY;

EID: 80053467490     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3633518     Document Type: Article

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