Field emission of gallium-doped carbon nanotubes

Advanced Materials Research

Volumn 535-537, Issue , 2012, Pages 61-66

  He, Hao ^a   Yuan, Chao ^b   Liang, Erjun ^a   Li, Shunfang ^a  

^a ZHENGZHOU UNIVERSITY   (China)

^b HENAN AGRICULTURAL UNIVERSITY   (China)

Author keywords

Doping; Field emission; Nanotubes

Indexed keywords

CARBON NANOTUBE FILMS; CNT FILMS; CO-DOPED; DEFECT CONCENTRATIONS; ELECTRONIC NATURES; FIELD EMISSION PROPERTY; FIRST-PRINCIPLES CALCULATION; GA DOPING; GA-DOPED; LOCAL DENSITY OF STATE; N-DOPED; TURN-ON FIELD;

BINDING ENERGY; DOPING (ADDITIVES); ELECTRIC FIELDS; FIELD EMISSION; GALLIUM; NANOTUBES; SEMICONDUCTOR DOPING;

CARBON NANOTUBES;

EID: 84868358521     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.535-537.61     Document Type: Conference Paper

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