Piezo-phototronic effect of CdSe nanowires

Advanced Materials

Volumn 24, Issue 40, 2012, Pages 5470-5475

  Dong, Lin ^a,b   Niu, Simiao ^a   Pan, Caofeng ^a   Yu, Ruomeng ^a   Zhang, Yan ^a   Wang, Zhong Lin ^a,c  

^a Georgia Institute of Technology   (United States)

^b ZHENGZHOU UNIVERSITY   (China)

^c INSTITUTE OF GEOLOGY AND GEOPHYSICS   (China)

Author keywords

CdSe nanowire; piezo phototronic; transport property

Indexed keywords

APPLIED STRAIN; CDSE; COMPRESSIVE STRAIN; CRITICAL STRAINS; ELECTRON HOLE PAIRS; ILLUMINATION INTENSITY; INTERNAL ELECTRIC FIELDS; OPTIMUM SENSITIVITY; PIEZO-PHOTOTRONIC; SCHOTTKY BARRIERS;

CADMIUM COMPOUNDS; ELECTRIC FIELDS; NANOWIRES; SCHOTTKY BARRIER DIODES; SEPARATION; TRANSPORT PROPERTIES;

CADMIUM ALLOYS;

BAYSILON; CADMIUM DERIVATIVE; CADMIUM SELENIDE; DIMETICONE; GOLD; NANOWIRE; SELENIUM DERIVATIVE;

ARTICLE; CATALYSIS; CHEMISTRY; ELECTRICITY; LIGHT; SEMICONDUCTOR; ULTRASTRUCTURE;

CADMIUM COMPOUNDS; CATALYSIS; DIMETHYLPOLYSILOXANES; ELECTRICITY; GOLD; LIGHT; NANOWIRES; SELENIUM COMPOUNDS; SEMICONDUCTORS;

EID: 84867564017     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201201385     Document Type: Article

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