Dependence of transport rate on area of lithography and pretreatment of tip in dip-pen nanolithography

Langmuir

Volumn 28, Issue 41, 2012, Pages 14509-14513

  Wu, Tzu Heng ^a   Lu, Hui Hsin ^a   Lin, Chii Wann ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

16-MERCAPTOHEXADECANOIC ACID; CHEMICAL PRINCIPLES; COMPREHENSIVE MODEL; DECAY DEPENDENCE; DIP-PEN NANOLITHOGRAPHY; LITHOGRAPHY PROCESS; NANOSTRUCTURE FABRICATION; PRE-TREATMENT; SHEDDING LIGHT; THEORETICAL MODELS; TRANSPORT RATE;

NANOLITHOGRAPHY; SURFACE CHEMISTRY;

LITHOGRAPHY;

16 MERCAPTOHEXADECANOIC ACID; 16-MERCAPTOHEXADECANOIC ACID; INK; NANOMATERIAL; PALMITIC ACID DERIVATIVE;

ARTICLE; CHEMISTRY; NANOTECHNOLOGY; SURFACE PROPERTY;

INK; NANOSTRUCTURES; NANOTECHNOLOGY; PALMITIC ACIDS; SURFACE PROPERTIES;

EID: 84867543834     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la302680k     Document Type: Article

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