High quality antireflective ZnS thin films prepared by chemical bath deposition

Materials Chemistry and Physics

Volumn 136, Issue 2-3, 2012, Pages 386-393

  Tec Yam, S ^a   Rojas, J ^a   Rejon V ^a   Oliva, A I ^a  

^a DEPARTAMENTO DE FÍSICA APLICADA   (Mexico)

Author keywords

Chemical synthesis; Nanostructures; Semiconductors; Thin films

Indexed keywords

ANTI-REFLECTIVE LAYERS; ANTIREFLECTIVE; BAND GAP ENERGY; CHEMICAL SYNTHESIS; CHEMICAL-BATH DEPOSITION; CUBIC STRUCTURE; DEPOSITION TIME; GLASS SUBSTRATES; HIGH QUALITY; HIGH TRANSPARENCY; KOH CONCENTRATION; MAGNETIC AGITATION; OPTICAL QUALITIES; PH CONDITION; STOICHIOMETRY RATIO; THICKNESS OF THE FILM; WAVELENGTH RANGES; ZNS FILMS; ZNS THIN FILMS;

DEPOSITION; NANOSTRUCTURES; OPTIMIZATION; SEMICONDUCTOR MATERIALS; STOICHIOMETRY; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC SULFIDE;

FILM PREPARATION;

EID: 84867397266     PISSN: 02540584     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matchemphys.2012.06.063     Document Type: Article

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