A dual-band parallel doherty power amplifier for wireless applications

IEEE Transactions on Microwave Theory and Techniques

Volumn 60, Issue 10, 2012, Pages 3214-3222

  Grebennikov, Andrei ^a   Wong, James ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b NOKIA RESEARCH CENTER   (United States)

Author keywords

Broadband Class E; Doherty amplifier; efficiency; GaN HEMT; reactance compensation; RF power amplifier; transmission line

Indexed keywords

ACTIVE ANTENNA ARRAYS; AMPLIFIER ARCHITECTURE; BANDWIDTH FREQUENCY; CLASS E; COMPENSATION TECHNIQUES; DOHERTY; DOHERTY POWER AMPLIFIER; DRAIN EFFICIENCY; DUAL-BAND; FREQUENCY RANGES; FUNDAMENTAL FREQUENCIES; GAN HEMTS; OPERATION MODE; OUTPUT POWER; PEAK-TO-AVERAGE RATIO; RF POWER AMPLIFIERS; SINGLE CARRIER; TRANSMISSION-LINE; WIDE FREQUENCY RANGE; WIRELESS APPLICATION;

ANTENNA ARRAYS; COMMUNICATION SYSTEMS; EFFICIENCY; ELECTRIC LINES; GALLIUM NITRIDE; MOBILE TELECOMMUNICATION SYSTEMS; WIRELESS TELECOMMUNICATION SYSTEMS;

DOHERTY AMPLIFIERS;

EID: 84867103457     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/TMTT.2012.2210906     Document Type: Article

References (15)

1. K. Bathich, A. Z. Markos, and G. Boeck, "A wideband GaN Doherty amplifier with 35% fractional bandwidth," in Proc. 40th Eur. Microw. Conf., 2010, pp. 1006-1009.
2. K. Bathich, D. Gruner, and G. Boeck, "Analysis and design of dualband GaN HEMT based Doherty amplifier," in Proc. 6th Eur. Microw. Integr. Circuits Conf., 2011, pp. 248-251.
3. G. Sun and R. H. Jansen, "Broadband Doherty power amplifier via real frequency technique," IEEE Trans. Microw. Theory Tech., vol. MTT-60, no. 1, pp. 99-111, Jan. 2012.
4. H. Zhang and K. J. Chen, "A stub tapped branch-line coupler for dualband operations," IEEE Microw. Wireless Compon. Lett., vol. 17, no. 2, pp. 106-108, Feb. 2007.
5. W. Chen, S. A. Bassam, X. Li, Y. Liu, K. Rawat, M. Helaoui, F. M. Ghannouchi, and Z. Feng, "Design and linearization of concurrent dual-band Doherty power amplifier with frequency-dependent power ranges," IEEE Trans. Microw. Theory Tech., vol. MTT-59, no. 10, pp. 2537-2546, Oct. 2011.
6. C. Monzon, "A small dual-frequency transformer in two sections," IEEE Trans. Microw. Theory Tech., vol. MTT-51, no. 4, pp. 1157-1161, Apr. 2003.
7. J. K. A. Everard and A. J. King, "Broadband power efficient Class E amplifiers with a non-linear CAD model of the active MOS device," J. Inst. Electron. Radio Eng., vol. 57, pp. 52-58, Mar. 1987.
8. H. Xu, S. Gao, S. Heikman, S. I. Long, U. K. Mishra, and R. A. York, "A high-efficiency Class-E GaN HEMT power amplifier at 1.9 GHz," IEEE Microw. Wireless Compon. Lett., vol. 16, no. 1, pp. 22-24, Jan. 2006.
9. A. Grebennikov, RF and Microwave Power Amplifier Design. New York: McGraw-Hill, 2004.
10. M. P. van der Heijden, M. Acar, and J. S. Vromans, "A compact 12-watt high-efficiency 2.1-2.7 GHz Class-E GaN HEMT power amplifier for base stations," in IEEE MTT-S Int. Microw. Symp. Dig., 2009, pp. 657-660.
11. Y.-F. Wu, R. A. York, S. Keller, B. P. Keller, and U. K. Mishra, "3-9-GHz GaN-based microwave power amplifiers with L-C-R broadband matching," IEEE Microw. Guided Wave Lett., vol. 9, no. 8, pp. 314-316, Aug. 1999.
12. K. Krishnamurthy, D. Green, R. Vetury, M. Poulton, and J. Martin, "0.5-2.5 GHz, 10 W MMIC power amplifier in GaN HEMT technology," in IEEE Compound Semiconduct. Integr. Circuits Symp. Dig., 2009, pp. 1-4.
13. J. Kim, F. Mkadem, and S. Boumaiza, "A high efficiency and multi-band/multi-mode power amplifier using a distributed second harmonic termination," in Proc. 40th Eur. Microw. Conf., 2010, pp. 1662-1665.
14. J. H. Qureshi, N. li, W. C. E. Neo, F. van Rijs, I. Blednov, and L. C. N. de Vreede, "A wideband 20 W LDMOS Doherty power amplifier," in IEEE MTT-S Int. Microw. Symp. Dig., 2010, pp. 1504-1507.
15. K. Bathich, A. Z. Markos, and G. Boeck, "Frequency response analysis and bandwidth extension of the Doherty amplifier," IEEE Trans. Microw. Theory Tech., vol. MTT-59, no. 4, pp. 934-944, Apr. 2011.