Unipolar complementary bistable memories using gate-controlled negative differential resistance in a 2D-2D quantum tunneling transistor

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1997, Pages 755-758

  Simmons, J A ^a   Blount, M A ^a   Moon, J S ^a   Baca, W E ^a   Reno, J L ^a   Hafich, M J ^a  

^a SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOUBLE ELECTRON LAYER TUNNELING TRANSISTORS (DELTT); UNIPOLAR COMPLEMENTARY BISTABLE MEMORY;

CARRIER CONCENTRATION; DATA STORAGE EQUIPMENT; ELECTRON TUNNELING; HETEROJUNCTIONS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS;

FIELD EFFECT TRANSISTORS;

EID: 84866930700     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)