New qualified industrial AlGaN/GaN HEMT process: Power performances & reliability figures of merit

European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012

Volumn , Issue , 2012, Pages 317-320

  Floriot, D ^a   Blanck, H ^a   Bouw, D ^a   Bourgeois, F ^a   Camiade, M ^a   Favede, L ^a   Hosch, M ^a   Jung, H ^a   Lambert, B ^a   Nguyen, A ^a   Riepe, K ^a   Splettstosse, J ^a   Stieglauer, H ^a   Thorpe, J ^a   Meiners, U ^a  

^a United Monolithic Semiconductors GmbH   (Germany)

Author keywords

AlGaN GaN HEMT; power transistor; reliability; robustness; technology

Indexed keywords

ALGAN/GAN HEMTS; ENERGY OF ACTIVATION; FIGURES OF MERITS; MEDIAN TIME TO FAILURES; PACKAGED TRANSISTORS; POWER TRANSISTORS; PROCESS MANUFACTURING; SPACE REQUIREMENTS;

ACTIVATION ENERGY; GALLIUM NITRIDE; MICROWAVE INTEGRATED CIRCUITS; POWER ELECTRONICS; RELIABILITY; ROBUSTNESS (CONTROL SYSTEMS); TECHNOLOGY; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84875953263     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

1. "Reliability Of GaN/AlGaN HEMT MMIC TECHNOLOGY ON 100 mm 4H-SiC" , Donald A. Gajewski, & al, 2010, MTT-S
2. " Gate Current Degradation Mechanisms of GaN High Electron Mobility Transistors", J. Joh & al, IEDM 2010
3. GaN on SiCDegradation Modes and Reliability Evaluation", Tutorial Jimenez, ESREF 2011
4. "A Manufacturable, High Power RF Gallium Nitride (GaN) Technology Portfolio With 65V Operation And Enhanced Linearity", J.B. Shealy & al, COMCAS 2011