A 1.2V 8.3nJ energy-efficient CMOS humidity sensor for RFID applications

IEEE Symposium on VLSI Circuits, Digest of Technical Papers

Volumn , Issue , 2012, Pages 24-25

  Tan, Zhichao ^a   Chae, Youngcheol ^a   Daamen, Roel ^b   Humbert, Aurélie ^b   Ponomarev, Youri V ^b   Pertijs, Michiel A P ^a  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b NXP SEMICONDUCTORS   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE-TO-DIGITAL CONVERTER; CMOS TECHNOLOGY; ENERGY EFFICIENT; INVERTER-BASED; POLYIMIDE LAYERS; RFID APPLICATIONS; RFID SENSORS;

CMOS INTEGRATED CIRCUITS; ENERGY EFFICIENCY; ENERGY UTILIZATION; POLYIMIDES; VLSI CIRCUITS;

HUMIDITY SENSORS;

EID: 84866634075     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VLSIC.2012.6243771     Document Type: Conference Paper

References (9)

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8. SHT21 datasheet, SENSIRION, http://www.sensirion.com.
9. B. Okcan and T. Akin, "A Low-Power Robust Humidity Sensor in a Standard CMOS Process," IEEE Trans. Electron Devices, vol. 54, no.11, 2007, pp. 3071-3078.