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Volumn 40, Issue 12, 2009, Pages 1867-1874

Temperature-depending Raman line-shift of silicon carbide

Author keywords

Raman line shift; Silicon carbide; Temperature

Indexed keywords

DOPING (ADDITIVES); LASER BEAMS; NITROGEN; PHONONS; SILICON WAFERS; SINGLE CRYSTALS; TEMPERATURE MEASUREMENT;

EID: 72249110296     PISSN: 03770486     EISSN: 10974555     Source Type: Journal    
DOI: 10.1002/jrs.2334     Document Type: Article
Times cited : (53)

References (28)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.