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Volumn 27, Issue 10, 2012, Pages

Fabrication of amorphous InGaZnO thin-film transistor-driven flexible thermal and pressure sensors

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS INDIUM GALLIUM ZINC OXIDES (A IGZO); AMORPHOUS INGAZNO; ARTIFICIAL SKIN; FLEXIBLE SENSOR; HIGH SENSITIVITY; NEW DEVICES; OUTPUT CURRENT; PRESSURE SENSITIVE; TEMPERATURE INCREASE; THERMAL SENSORS; THIN-FILM TRANSISTOR (TFTS);

EID: 84866334377     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/27/10/105019     Document Type: Article
Times cited : (21)

References (16)
  • 2
    • 23144448493 scopus 로고    scopus 로고
    • 10.1109/JPROC.2005.851237 0018-9219
    • Reuss R H et al 2005 Proc. IEEE 93 1239
    • (2005) Proc. IEEE , vol.93 , Issue.7 , pp. 1239
    • Reuss, R.H.1
  • 13
    • 51849102800 scopus 로고    scopus 로고
    • 10.1063/1.2962985 0003-6951 053505
    • Park J et al 2008 Appl. Phys. Lett. 93 053505
    • (2008) Appl. Phys. Lett. , vol.93 , Issue.5
    • Park, J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.