Hopping conduction in Mn ion-implanted GaAs nanowires

Nano Letters

Volumn 12, Issue 9, 2012, Pages 4838-4842

  Paschoal, Waldomiro ^a,b   Kumar, Sandeep ^a   Borschel, Christian ^c   Wu, Phillip ^a   Canali, Carlo M ^d   Ronning, Carsten ^c   Samuelson, Lars ^a   Pettersson, Håkan ^a,b  

^a LUND UNIVERSITY   (Sweden)

^b HALMSTAD UNIVERSITY   (Sweden)

^c FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

^d LINNAEUS UNIVERSITY   (Sweden)

Author keywords

GaMnAs; ion implantation; Mott hopping; nanowires; self assembly; spintronics

Indexed keywords

GAAS; GAMNAS; HEAVILY DOPED; HIGH ELECTRIC FIELDS; HOPPING CONDUCTION; HOPPING ENERGIES; HOPPING PROCESS; LOW TEMPERATURES; MOTT HOPPING; MOTT VARIABLE-RANGE HOPPING; NEAREST NEIGHBOR HOPPING; STRONGLY NONLINEAR; TEMPERATURE DEPENDENT;

ELECTRIC FIELDS; GALLIUM ARSENIDE; ION IMPLANTATION; MAGNETOELECTRONICS; MANGANESE; MANGANESE COMPOUNDS; SELF ASSEMBLY; SEMICONDUCTING GALLIUM;

NANOWIRES;

GALLIUM; GALLIUM ARSENIDE; MANGANESE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; MATERIALS TESTING; TEMPERATURE; THERMAL CONDUCTIVITY; ULTRASTRUCTURE;

ARSENICALS; ELECTRIC CONDUCTIVITY; ELECTRON TRANSPORT; GALLIUM; MANGANESE; MATERIALS TESTING; NANOSTRUCTURES; TEMPERATURE; THERMAL CONDUCTIVITY;

EID: 84866332692     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl302318f     Document Type: Article

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