SCOPUS 정보 검색 플랫폼

Volumn 12, Issue 9, 2012, Pages 7101-7104

Nanowire dimensions effect on ON/OFF current ratio and sub-threshold slope in silicon nanowire transistors

Author keywords

Ion Ioff Ratio; Nanowire; Sub Threshold Slope; Transistor

Indexed keywords

CRITICAL FACTORS; LOW DIAMETERS; ON/OFF CURRENT RATIO; OXIDE THICKNESS; SILICON NANOWIRE TRANSISTORS; SUBTHRESHOLD; TRANSISTOR CHARACTERISTICS;

NANOWIRES; TRANSISTORS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84866127190 PISSN: 15334880 EISSN: 15334899 Source Type: Journal
DOI: 10.1166/jnn.2012.6516 Document Type: Article

Times cited : (10)

References (10)

1
- 84863393729
- K. Ariga A. Vinu, Y. Yamauchi, Q. Ji, and J. P. Hill, Bull. Chem. Soc. Jpn. 85, 1 (2012).
- (2012) Bull. Chem. Soc. Jpn. , vol.85 , pp. 1
- Ariga, K.¹ Yamauchi, Y.² Ji, Q.³ Hill, J.P.⁴

2
- 84857154314
- T. Panda and K. Deepa, J. Nanosci. Nanotechnol. 11, 10279 (2011).
- (2011) J. Nanosci. Nanotechnol. , vol.11 , pp. 10279
- Panda, T.¹ Deepa, K.²

3
- 84857147227
- E. Abdullayev and Y. Lvov, J. Nanosci. Nanotechnol. 11, 10007 (2011).
- (2011) J. Nanosci. Nanotechnol. , vol.11 , pp. 10007
- Abdullayev, E.¹ Lvov, Y.²

4
- 84863170206
- H. B. Zhang, C. Chen, J. W. Wang, Y. Yang, Z. H. Lu, Q. Yan, and W. G. Zheng, J. Nanosci. Nanotechnol. 11, 10868 (2011).
- (2011) J. Nanosci. Nanotechnol. , vol.11 , pp. 10868
- Zhang, H.B.¹ Chen, C.² Wang, J.W.³ Yang, Y.⁴ Lu, Z.H.⁵ Yan, Q.⁶ Zheng, W.G.⁷

5
- 77949275137
- J. P. Colinge, C.W. Lee, A. Afzalian, N. D. Akhavan, R. Yan, I. Ferain, P. Razavi, B. O'Neill, A. Blake, M. White, A. M. Kelleher, B. McCarthy, and R. Murphy, Nature Nanotech. 5, 225 (2010).
- (2010) Nature Nanotech. , vol.5 , pp. 225
- Colinge, J.P.¹ Lee, C.W.² Afzalian, A.³ Akhavan, N.D.⁴ Yan, R.⁵ Ferain, I.⁶ Razavi, P.⁷ O'Neill, B.⁸ Blake, A.⁹ White, M.¹⁰ Kelleher, A.M.¹¹ McCarthy, B.¹² Murphy, R.¹³

6
- 77749320248
- A. M. Ionescu, Nature Nanotech. 5, 178 (2010).
- (2010) Nature Nanotech. , vol.5 , pp. 178
- Ionescu, A.M.¹

7
- 84866095747
- M. Bescond, K. Nehari, J. L. Autran, N. Cavassilas, D. Munteanu, and M. Lannoo, IEDM Tech Digest (IEEE), San Francisco (USA) (2004), p. 617. 8. R. V. Martínez, J. Martínez, and R. Garcia, Nanotechnology 21, 24 (2010).
- (2004) Nanotechnology , vol.21 , pp. 24
- Bescond, M.¹ Nehari, K.² Autran, J.L.³ Cavassilas, N.⁴ Munteanu, D.⁵ Lannoo, M.⁶

8
- 84866089419
- Proceedings of 35th european solid-state device research conference (essderc 2005) (2005
- K. Nehari, N. Cavassilas, J. L. Autran, M. Bescond, D. Munteanu, and M. Lannoo, Proceedings of 35th European Solid-State Device Research Conference (ESSDERC 2005) (2005), p. 229. 10. J. Wang, E. Polizzi, and M. S. Lundstrom, J. Appl. Phys. 96, 2192, (2004).
- (2004) J. Appl. Phys. , vol.96 , pp. 2192
- Nehari, K.¹ Cavassilas, N.² Autran, J.L.³ Bescond, M.⁴ Munteanu, D.⁵ Lannoo, M.⁶

9
- 83755179215
- DOI: 10254/nanohubr3843.5
- S. Kim, G. Klimeck, S. Damodaran, B. Haley, MuGFET, http://nanohub.org/ resources/NANOFINFET. (DOI: 10254/nanohubr3843.5) (2011).
- (2011) MuGFET
- Kim, S.¹ Klimeck, G.² Damodaran, S.³ Haley, B.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.