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Volumn 2007, Issue , 2007, Pages

Delineation of crystalline extended defects on multicrystalline silicon wafers

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; POLYSILICON; SILICON WAFERS;

EID: 33845901491     PISSN: 1110662X     EISSN: 1110662X     Source Type: Journal    
DOI: 10.1155/2007/18298     Document Type: Article
Times cited : (13)

References (14)
  • 4
    • 0031373428 scopus 로고    scopus 로고
    • Dislocation-point defect interaction effect on local electrical properties of semiconductors
    • E. B. Yakimov Dislocation-point defect interaction effect on local electrical properties of semiconductors. Journal de Physique III France 7 1997 12 2293 2307
    • (1997) Journal de Physique III France , vol.7 , Issue.12 , pp. 2293-2307
    • Yakimov, E.B.1
  • 7
    • 0000365776 scopus 로고
    • Copper precipitation on dislocations in silicon
    • W. C. Dash Copper precipitation on dislocations in silicon. Journal of Applied Physics 27 1956 10 1193 1195
    • (1956) Journal of Applied Physics , vol.27 , Issue.10 , pp. 1193-1195
    • Dash, W.C.1
  • 8
    • 0000926419 scopus 로고
    • Chromic-hydrofluoric acid as a specific system for the development of Etch pits on silicon
    • E. Sirtl A. Z. Adler Chromic-hydrofluoric acid as a specific system for the development of Etch pits on silicon. Zeitschrift für Metallkunde 52 1961 8 529 531
    • (1961) Zeitschrift für Metallkunde , vol.52 , Issue.8 , pp. 529-531
    • Sirtl, E.1    Adler, A.Z.2
  • 10
    • 0021426017 scopus 로고
    • An Etch for delineation of defects in silicon
    • K. H. Yang An Etch for delineation of defects in silicon. Journal of the Electrochemical Society 131 1984 5 1140 1145
    • (1984) Journal of the Electrochemical Society , vol.131 , Issue.5 , pp. 1140-1145
    • Yang, K.H.1
  • 11
    • 33845884425 scopus 로고
    • A preferential Etch for silicon crystals*Gupta D. C.
    • American Society for Testing and Materials Philadelphia, Pa, USA
    • K. H. Yang A preferential Etch for silicon crystals. D. C. Gupta Semiconductor Processing, ASTM STP 850 American Society for Testing and Materials Philadelphia, Pa, USA 1984
    • (1984) Semiconductor Processing, ASTM STP 850
    • Yang, K.H.1
  • 12
    • 0017491527 scopus 로고
    • A new preferential Etch for defects in silicon crystals
    • W. M. Jenkins A new preferential Etch for defects in silicon crystals. Journal of the Electrochemical Society 124 1977 5 479 762
    • (1977) Journal of the Electrochemical Society , vol.124 , Issue.5 , pp. 479-762
    • Jenkins, W.M.1
  • 14
    • 0032714040 scopus 로고    scopus 로고
    • Chemistry and physics of segregation of impurities at extended defects in silicon
    • S. Pizzini Chemistry and physics of segregation of impurities at extended defects in silicon. Physica Status Solidi (a) 171 1999 1 123 132
    • (1999) Physica Status Solidi (A) , vol.171 , Issue.1 , pp. 123-132
    • Pizzini, S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.